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Intel reinvents the transistor |
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Written by Kacey Green
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Saturday, 27 January 2007 |
 BetaNews reports : 1/27
BetaNews does an awesome job explaining the new Intel 45nm process. In an article written in plain English with a small dose of technical speak. Intel will be using new materials that increase performance and reduce power consumption. Since the 60s that the gates in the transistors have been made from silicon dioxide, now they will be made from hafnium, atomic number 72, it is often found in zirconium which is used to make artificial diamonds.
In a presentation to exclusively invited reporters Friday morning, Intel announced a breakthrough development in microprocessor manufacturing that may be given historical significance in decades to come: the discovery of a new molecular compound material that will replace silicon dioxide in microprocessors using 45nmm and smaller lithographies.
If Intel licenses this technology we could see power efficiency increases in more electronics than just the processors and IC chips. 2008 looks like when we'll see the AMD-Intel battle at the 45nm scale, because that's when AMD plans to have chips at this scale.
Read the whole three page article at BetaNews .
Kacey Green
www.grlt.com
"Tech with a twist of lime!"
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Last Updated ( Monday, 29 January 2007 )
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